Submicron resolution deep UV photolithography

22 January 1981

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 17 (2) , 61-62
https://doi.org/10.1049/el:19810044

Abstract

A vacuum contact printing technique was used to evaluate the resolution limits of deep UV photolithography with a 300±30 nm exposure band. For the first time, an array of 200 chip sites containing 0.5 μm meander patterns 3 cm long was clearly resolved in AZ 2415 positive resist across 2 in diameter silicon wafers.

Keywords

AZ 2415 POSITIVE RESIST
SI WAFERS
RESOLUTION LIMITS
DEEP UV PHOTOLITHOGRAPHY
MEANDER PATTERNS
CHIP SITES
VACUUM CONTACT PRINTING TECHNIQUE

This publication has 0 references indexed in Scilit: