Role of radiation damage on the contact resistance of GaAs Schottky barriers

17 October 1974

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 10 (21) , 428-429
https://doi.org/10.1049/el:19740341

Abstract

The effects of radiation damage on the current/voltage characteristics of Ni-GaAs Schottky barriers are studied. Boron ions implanted into the semiconductor are shown to reduce the device contact resistance. The nature of the defect levels so introduced are studied by thermally stimulated current and capacitance measurements.

Keywords

SCHOTTKY EFFECT
SEMICONDUCTOR METAL BOUNDARIES
RADIATION DAMAGE
GAAS SCHOTTKY BARRIERS
CONTACT RESISTANCE
NI-GAAS
RADIATION EFFECTS
CURRENT/VOLTAGE CHARACTERISTICS

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