Epitaxial structure dependence of the linewidth enhancement factor in GaAs and InGaAs quantum well lasers

6 June 1997

proceedings article
Published by SPIE-Intl Soc Optical Eng

Vol. 2994, 542-551
https://doi.org/10.1117/12.275604

Abstract

The linewidth enhancement factor, (alpha) , plays a key role in our ability to obtain spatially coherent output from high-power semiconductor lasers and amplifiers. To obtain (alpha) values, modal gain and carrier-induced refractive index change have been measured in broad-area quantum well epitaxial structures with various well depths, widths, and compositions as functions of current density.© (1997) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

Keywords

QUANTUM WELL
SEMICONDUCTOR LASERS
REFRACTIVE INDEX
CURRENT DENSITY
LASERS
QUANTUM WELLS
GALLIUM ARSENIDE
AMPLIFIERS

This publication has 0 references indexed in Scilit: