Raman characterisation of stress in recrystallised silicon-on-insulator
- 10 November 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (23) , 1420-1422
- https://doi.org/10.1049/el:19880970
Abstract
Raman scattering measurements were carried out to characterise Si films deposited on SiO2-coated Si substrates and recrystallised by a graphite strip heater or Ar+ ion laser. The frequency downshifts of the Raman peaks demonstrate that the Si films are under tensile stress. The crystallinity of the recrystallised films is also discussed.Keywords
This publication has 2 references indexed in Scilit:
- Elimination of Subboundaries from Zone-Melting-Recrystallized Silicon-On-Insulator FilmsMRS Proceedings, 1985
- Resonance phenomenaPublished by Springer Nature ,1982