Homogeneous Dopant Distribution of Silicon Crystal Grown by Vertical Magnetic Field-Applied Czochralski Method
- 1 January 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (1A) , L37
- https://doi.org/10.1143/jjap.23.l37
Abstract
Phosphorus-doped Czochralski (CZ) silicon crystals with less than 5% macroscopic radial and microscopic axial resistivity variations are grown in the presence of 1000 Oe vertical magnetic field strength. Crystals with extremely improved dopant homogeneity are facilitated by determining the appropriate crystal and crucible rotation rates corresponding to the residual thermal convection in the molten silicon. Experimental results can be consistently explained by flow model of forced and thermal convections which are stabilized by a magnetic field.Keywords
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