A fully automated technique for the rapid assessment of uniformity of doped layers by the four point probe method

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Abstract
A measurement procedure based on the four point method has been used for the assessment of semiconductor doping uniformity. Some of the causes of inaccuracy in four point probe measurements are discussed and methods of reducing the effects are described. It is demonstrated that provided suitable precautions are taken during the measurement, the reproducibility of measurement is better than one percent. The technique described uses automated measurement and wafer scanning equipment. Data is analysed by computer to derive maps of the sheet resistance variations. Uses of the technique to show processing induced non uniformities in doped layers are discussed and some examples are shown

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