The dynamic interaction of triethyl gallium with GaAs(100) surfaces monitored using optical second-harmonic generation
- 1 October 1989
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 1 (SB) , SB251-SB253
- https://doi.org/10.1088/0953-8984/1/sb/064
Abstract
The authors report the results of a preliminary investigation into the use of optical second-harmonic generation (SHG) as a probe of surface processes involved in semiconductor growth. It is demonstrated that a predominantly surface SH signal may be generated from GaAs(100) substrates. The dynamic interaction of triethyl gallium, a typical reactant in MOVPE growth of GaAs, with an As-rich GaAs(100) surface at 300 K has been monitored using SHG. It is shown that this interaction gives rise to a permanent increase in the SH intensity.Keywords
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