Electron and hole in-plane mobilities in HgTe-CdTe superlattices

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Abstract
Using a recently developed formalism for free-carrier transport in semiconductor superlattices with interacting quantum wells, we have calculated in-plane mobilities for electrons and holes in HgTe-CdTe heterostructures. Details of the highly nonparabolic and anisotropic band structures are fully incorporated into the theory, and the previous treatment of interface roughness scattering in quasi-two-dimensional structures has been generalized to account for superlattices with significant interwell interactions. Our results accurately account for a number of distinctive features in the experimental data, and good agreement between theory and experiment is obtained.