Low Temperature Preparation of Hydrogenated Amorphous Silicon by Microwave Electron-Cyclotron-Resonance Plasma CVD
- 1 April 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (4A) , L231
- https://doi.org/10.1143/jjap.26.l231
Abstract
Hydrogenated amorphous silicon films were deposited by microwave electron-cyclotron-resonance plasma CVD technique using pure mono silane gas without intentional substrate heating. A high photoconductivity value of 10-6∼10-5(Ω·cm)-1 under simulated AM1 (100mW/cm2) illumination was obtained for the as-grown films with optical gaps of ∼2.1 eV. Localized tail states estimated from optical absorption measurements are discussed with the characteristics of the films.Keywords
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