Molecular Beam Epitaxy of Wurtzite GaN-Based Magnetic Alloy Semiconductors

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Abstract
The preparation of hexagonal GaN:Mn and GaN:Fe epilayers has been studied by RF-plasma-assisted molecular beam epitaxy. GaN:Fe epilayers exhibit superparamagnetic behavior, presumably due to ferromagnetic inclusions. GaN:Mn epilayers can be expressed in the form of Ga1-x Mn x N with x up to 0.02, indicating the successful preparation of the GaN-based magnetic alloy semiconductor for the first time. The epilayers are primarily paramagnetic and highly resistive. For epilayers with very high Mn concentration (∼ 1021 cm-3), analysis of the paramagnetic component has revealed the effective spin number S ≈2.5 together with the positive paramagnetic Curie temperature. This suggests the presence of ferromagnetic spin exchange between Mn ions.