Photoluminescence of Zincselenide Single Crystals Grown by the Sublimation Method

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Abstract
Zincselenide (ZnSe) single crystals were grown by the sublimation method with various growth times between 48 and 144 h at 1250° C. Seed crystals were obtained by growth in argon or hydrogen atmosphere for 24 h at 1000° C. The obtained crystals were examined by photoluminescence (PL) measurement at 4.2 K. The bandgap energy (Eg) decreases in the growth time from 48 to 96 h and increases in the growth time from 96 to 144 h in seed crystals obtained under both atmospheres. These decreases in Eg are due to the increase in the number of Se vacancies in the growth times between 48 and 96 h, and the increase in the number of Zn vacancies in the growth times between 96 and 144 h.