EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300°K FROM Ga1-xAlxAs p-n JUNCTIONS GROWN BY LIQUID-PHASE EPITAXY
- 1 August 1967
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 11 (3) , 81-83
- https://doi.org/10.1063/1.1755045
Abstract
Efficient visible light emitting diodes have been fabricated from Ga1-xAlxAs. Epitaxial layers were obtained by a modified solution growth technique. External quantum efficiencies of up to 3.3% have been measured at room temperature on diodes, which had their emission at 1.70 eV. The switching time for the light emission at 300°K was measured to be 60 nsec.Keywords
This publication has 4 references indexed in Scilit:
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- Injection Electroluminescence in (AlxGa1−x)As Diodes of Graded Energy GapJournal of Applied Physics, 1966
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