Electronic excitations in narrow GaAs/AlxAlxGa−1xAs quantum well structures
- 31 December 1988
- journal article
- Published by Elsevier in Surface Science
- Vol. 196 (1-3) , 613-618
- https://doi.org/10.1016/0039-6028(88)90750-9
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Nonequilibrium longitudinal-optical phonon effects in GaAs-AlGaAs quantum wellsPhysical Review Letters, 1987
- Time-resolved Raman scattering in GaAs quantum wellsPhysical Review Letters, 1987
- Strong 8.2 μm infrared intersubband absorption in doped GaAs/AlAs quantum well waveguidesApplied Physics Letters, 1987
- Inelastic light scattering by electronic excitations in semiconductor heterostructuresIEEE Journal of Quantum Electronics, 1986
- First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum wellApplied Physics Letters, 1985
- Spectroscopy of electron subbands on Ge-(111)Solid State Communications, 1980
- On the absorption of infrared radiation by electrons in semiconductor inversion layersSolid State Communications, 1976
- The interface EM modes of a “surface quantized” plasma layer on a semiconductor surfaceSurface Science, 1976