Luminescent Properties of CdTe Diode
- 1 December 1966
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 5 (12)
- https://doi.org/10.1143/jjap.5.1171
Abstract
Mechanisms of luminescent recombination in the P and Cd diffused CdTe diodes are investigated through the measurements of their injection luminescence, electrical properties and photoluminescence. Efficient cascade-type energy transfer is found in the diodes at 4.2°K: the primary fluorescence produced in the n-region of the diode excites the secondary luminescence in the p-region. An energy band tail due to in corporated P ions is recognized from the observed spacial dependence of the photoluminescence spectra in the junction region of the diode. These results, together with the electrical properties, are discussed and compared with those of the GaAs laser diode. Spin-orbit splitting of the valence bands of CdTe is determined to be 0.86 eV by the measurement of optical absorption in the P doped crystals.Keywords
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