Organic Thin-Film Transistors with High Electron Mobility Based on Perfluoropentacene
Open Access
- 1 June 2005
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 44 (6R) , 3663
- https://doi.org/10.1143/jjap.44.3663
Abstract
We report on n-channel organic thin-film transistors (OTFTs) based on the novel n-type organic semiconductor, perfluoropentacene. The transistor exhibits excellent electrical characteristics, with a high electron mobility of 0.22 cm2/(V s) and a good current on/off ratio of 105. The electron mobility is comparable to the hole mobility of a pentacene OTFT. By combining the n-type perfluoropentacene and the p-type pentacene, we have fabricated ambipolar OTFTs and complementary inverter circuits. The OTFTs with heterostructures of the p- and n-type organic semiconductors can operate as an ambipolar device with high electron and hole mobilities of 0.042 and 0.041 cm2/(V s). The complementary inverter using an n-channel perfluoropentacene OTFT and a p-channel pentacene OTFT exhibits excellent transfer characteristics with a voltage gain of 45. A complementary inverter using the ambipolar OTFTs is also demonstrated.Keywords
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