Ultrasonic attenuation in GaAs and InSb
- 1 January 1975
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (1) , 467-468
- https://doi.org/10.1063/1.321363
Abstract
Second−and third−order elastic moduli have been used to evaluate the attenuation suffered by compressional and shear acoustic waves propagating along 〈100〉 and 〈110〉 directions and shear waves polarized along 〈100〉, 〈11̄0〉, and 〈001〉 directions for GaAs and InSb, due to phonon viscosity and thermoelastic phenomena at 298 °K. The Grüneisen mode 〈γ〉, the average square Grüneisen 〈γ2〉, nonlinearity constant D, phonon viscosity, and the dislocation drag along 〈100〉 and 〈110〉 directions are also discussed.This publication has 7 references indexed in Scilit:
- Ultrasonic Attenuation in Pure and Doped-Type GermaniumPhysical Review B, 1973
- Velocity and attenuation of ultrasonic waves in n-GaAs at low temperaturesSolid State Communications, 1973
- Ultrasonic Attenuation in Copper, Silver, and GoldPhysical Review B, 1972
- Ultrasonic Attenuation in Two Fluorite-Structure CrystalsPhysical Review B, 1972
- Phonon Conductivity of InSb and GaAs in the Temperature Range 2-300 °KPhysical Review B, 1971
- The third-order elastic constants of indium antimonideProceedings of the Physical Society, 1967
- Third order elastic constants of gallium arsenideSolid State Communications, 1966