Photo-Excited Etching of Poly-Crystalline and Single-Crystalline Silicon in Cl2 Atmosphere
- 1 January 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (1R) , 68-74
- https://doi.org/10.1143/jjap.24.68
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Surface processes in plasma-assisted etching environmentsJournal of Vacuum Science & Technology B, 1983
- RIE Contamination of Etched Silicon SurfacesJournal of the Electrochemical Society, 1982
- Anisotropic plasma etching of polysiliconJournal of Vacuum Science and Technology, 1980
- Field penetration and band bending near semiconductor surfaces in high electric fieldsSurface Science, 1979
- Chemisorption of chlorine on Si(111) 7 × 7 and 1 × 1 surfacesPhysical Review B, 1977
- Mechanism investigations of a pulsed laser light induced desorptionPhysica Status Solidi (a), 1976
- Chemical relaxation molecular beam studies of reactive gas-solid scatteringSurface Science, 1971
- Theory of the oxidation of metalsReports on Progress in Physics, 1949
- The theory of the formation of protective oxide films on metals.—IIITransactions of the Faraday Society, 1947
- Variation with Temperature of the Continuous Absorption Spectrum of Diatomic Molecules: Part I. Experimental, The Absorption Spectrum of ChlorinePhysical Review B, 1933