New double heterostructure optoelectronic triangular barrier switch (OETBS)
- 28 August 1986
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 22 (18) , 952-953
- https://doi.org/10.1049/el:19860649
Abstract
A new high-speed, high-power optoelectronic device, with a double heterostructure, is proposed and demonstrated. The device has bistable electrical characteristics where light emission occurs in the on-state. The high optical power output was measured to be 209μW at 100 mA. The transient electrical and optical rise times have been measured to be 500 ps and 1 ns, respectively.Keywords
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