Epitaxial nickel and cobalt suicide formation by rapid thermal annealing
- 1 February 1986
- journal article
- research article
- Published by Springer Nature in Applied Physics A
- Vol. 39 (2) , 141-145
- https://doi.org/10.1007/bf00616832
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Epitaxial PtSi and Pd2Si formed by rapid thermal annealingMaterials Letters, 1985
- Schottky barrier heights of single crystal silicides on Si(111)Journal of Vacuum Science & Technology B, 1984
- Behaviour of implanted arsenic in silicon single crystals subjected to transient heating with incoherent lightApplied Physics A, 1984
- Growth of Nickel Silicides on Silicon by Short Duration Incoherent Light ExposureMRS Proceedings, 1983
- The Contribution of Beam Processing to Present and Future Integrated Circuit TechnologiesMRS Proceedings, 1983
- Epitaxial Nickel Disilicide Formation by Electron Beam AnnealingMRS Proceedings, 1983
- Liquid Phase Growth of Epitaxial Ni and Co Silicides by Pulsed Laser IrradiationMRS Proceedings, 1983
- Silicon/metal silicide heterostructures grown by molecular beam epitaxyApplied Physics Letters, 1980
- Double heteroepitaxy in the Si (111)/CoSi2/Si structureApplied Physics Letters, 1980
- Nucleation-controlled thin-film interactions: Some silicidesApplied Physics Letters, 1979