MOS device fabrication via plasma immersion ion implantation
- 30 April 1997
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 41 (4) , 535-537
- https://doi.org/10.1016/s0038-1101(96)00218-3
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Advanced surface treatments by plasma ion implantationSurface and Coatings Technology, 1994
- Low-energy separation by implantation of oxygen structures via plasma source ion implantationApplied Physics Letters, 1994
- Plasma immersion ion implantation for ULSI processingNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
- Plasma source ion-implantation technique for surface modification of materialsJournal of Applied Physics, 1987
- Electronic Conduction in Dielectric FilmsJournal of the Electrochemical Society, 1969