Measurement of spontaneous-emission factor of AlGaAs double-heterostructure semiconductor lasers
- 1 August 1977
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 13 (8) , 596-600
- https://doi.org/10.1109/jqe.1977.1069417
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Dynamic behaviour of semiconductor lasersElectronics Letters, 1975
- Rate equation approach for diode lasersOptical and Quantum Electronics, 1974
- Frequency response of Ga1-xAlxAs light-emitting diodesIEEE Transactions on Electron Devices, 1974
- Intrinsic fluctuations in the output intensity of double-heterostructure junction lasers operating continuously at 300°KApplied Physics Letters, 1974
- GaAs–AlxGa1−xAs Double Heterostructure Lasers—Effect of Doping on Lasing Characteristics of GaAsJournal of Applied Physics, 1972
- Optically excited bulk semiconductor lasersIEEE Journal of Quantum Electronics, 1970