Photocurrent measurements on GaP : N green-light-emitting diodes
- 1 March 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 22 (5) , 224-226
- https://doi.org/10.1063/1.1654618
Abstract
Photocurrent measurements are shown to provide a convenient technique for determining the nitrogen concentration in the active region of GaP diodes designed for green light emission. The strength of the photocurrent peak at the A‐line energy can be correlated semiquantitatively with the diode efficiency in devices which differ only in their nitrogen content. Room‐temperature photocurrent measurements of Schottky barrier diodes formed by gold evaporation on epitaxial material can be similarly used for determining the relative nitrogen concentration.Keywords
This publication has 3 references indexed in Scilit:
- Efficient green electroluminescent junctions in GaPPublished by Elsevier ,2002
- Green Electroluminescence from Gallium Phosphide Diodes near Room TemperatureJournal of Applied Physics, 1967
- Isoelectronic Traps Due to Nitrogen in Gallium PhosphidePhysical Review B, 1966