Influence of stacking disorder on Wannier excitons in layered semiconductors
- 14 June 1977
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 10 (11) , 1887-1894
- https://doi.org/10.1088/0022-3719/10/11/023
Abstract
The influence of stacking disorder on Wannier excitons in layered semiconductors is discussed. In particular it is found that in the presence of stacking disorder the excitons are confined to a finite number of layers. The experimental results are discussed for GaSe. In this case the absorption spectra turn out to be strongly sample dependent. In general they show a pronounced fine structure near the exciton groundstate energy, which can be understood as a consequence of the disorder-induced localization of the excitons. The variety of absorption spectra observed in GaSe can be related to the different stacking orders occurring in this material.Keywords
This publication has 8 references indexed in Scilit:
- Stacking-fault splitting of exciton states in GaSeIl Nuovo Cimento B (1971-1996), 1976
- Influence of stacking disorder on the electronic properties of layered semiconductorsPhysical Review B, 1975
- The band gap excitons in PbI2Journal of Physics and Chemistry of Solids, 1975
- Photoluminescence ofGaSeIl Nuovo Cimento B (1971-1996), 1974
- GaSe: A layer compound with anomalous valence band anisotropySolid State Communications, 1974
- The band-gap excitons in gallium selenideIl Nuovo Cimento B (1971-1996), 1973
- The electronic structure of GaSeIl Nuovo Cimento B (1971-1996), 1973
- Excitons in GaSe polytypesPhysics Letters A, 1967