Enhanced electro-optic polarisation rotation in AlGaAs/GaAs (111) quantum wells

11 October 1990

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 26 (21) , 1769-1770
https://doi.org/10.1049/el:19901136

Abstract

The effect of an applied electric fields on the phase difference between perpendicular optical polarisations has been measured in (111) and (100) GaAs/AlGaAs quantum well waveguides. It is determined that, at λ = 1.06 μm, this effect is 48% larger in waveguides constructed of (111) quantum wells in comparison with that of similar (100) structures.

Keywords

PERPENDICULAR OPTICAL POLARISATIONS
ELECTROOPTIC DEVICES
ELECTRO-OPTIC POLARISATION ROTATION
APPLIED ELECTRIC FIELD EFFECT
1.6 MICRON
SEMICONDUCTORS
(100) SURFACE
GAAS-ALGAAS QUANTUM WELL WAVEGUIDES
(111) SURFACE
PHASE DIFFERENCE

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