Pulse-driven silicon p-n junction avalanche oscillators for the 0.9 to 20 mm band
- 1 August 1967
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 14 (8) , 411-418
- https://doi.org/10.1109/T-ED.1967.15974
Abstract
The fabrication of pulse-driven, diffused silicon p-n junction avalanche oscillators which have been operated at frequencies from 15 to 341 GHz is described. The experimental behavior of a large number of oscillators has been correlated with readily measurable properties of the p-n junctions, leading to first-order design parameters for construction of oscillators of this type usable at various frequencies into the submillimeter-wave region. Maximum peak power outputs ranged from 2 watts near 15 GHz to 75 mW at 115 GHz; the estimated peak power at 300 GHz was of the order of 1 mW.Keywords
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