Amorphization and Conductivity of Silicon and Germanium Induced by Indentation
- 23 May 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 60 (21) , 2156-2159
- https://doi.org/10.1103/physrevlett.60.2156
Abstract
We report the observation, by transmission electron microscopy, that single-crystal silicon and germanium are converted to an amorphous state at room temperature directly under both Vickers and Knoop indentations. The effect is seen for crystal orientations of [001], [011], and [111], and with applied loads between 0.1 and 0.5 N. We also observe that the materials become electrically conducting under load and that the process is reversible on subsequent unloading and reloading. Furthermore, the transformed phase is found to make Ohmic contact to the surrounding, untransformed, semiconductor.Keywords
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