Valence compensation of thermally generateddefects in MgO
- 1 May 1979
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 19 (9) , 4421-4426
- https://doi.org/10.1103/physrevb.19.4421
Abstract
The creation of thermally generated defects (configuration: --) and other lithium-associated centers in MgO is attended by valence changes of transition-metal impurities, such as Fe and Cr. The electron-paramagnetic-resonance (EPR) technique was used to monitor the concentrations of these impurities and the defects as a function of the incubating temperature in static air. Although near the threshold temperature for production the impurities may contribute a significant portion of the holes needed for the valence compensation of stabe defects, at higher temperatures (∼1600 K) they can supply only a small percentage of the holes required. Since oxygen was found to be necessary for the formation of defects, the primary source of holes at these high temperatures is attributed to the surface reaction: →+4 holes. The effects of optical bleaching and ionizing radiation at 77 K on the concentrations were studied as a function of incubating temperatures. Electron-nuclear double resonance (ENDOR) was used to probe the local environments of the defects and other lithium-associated centers.
Keywords
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