Interface depth resolution of Auger sputter profiled Ni/Cr interfaces: Dependence on ion bombardment parameters

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Abstract
Interface broadening which often results as a consequence of sputter profiling can make it difficult to assess the structure of an original interface. There are a number of factors involved in this broadening which are associated with the parameters of the ion bombardment and which have not previously been evaluated. Sputter profile measurements obtained on a set of similarly fabricated Ni/Cr multilayered thin-film structures have shown that it is practical to systematically examine this interface broadening dependence on ion beam energy, ion current density, and angle of incidence, all as a function of sputtered depth. Results are presented of such a set of Auger sputter depth profile measurements and indicate that there can be dramatic changes in sputtered interface widths depending on the ion bombardment parameters used.

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