Si doping of high-Al-mole fraction AlxGa1−xN alloys with rf plasma-induced molecular-beam-epitaxy
- 30 December 2002
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (27) , 5192-5194
- https://doi.org/10.1063/1.1534395
Abstract
Very high levels of n-type doping of AlxGa1−xN alloys were recently achieved by rf plasma-induced molecular-beam epitaxy on sapphire substrates and Si as a dopant. Electron concentrations were obtained up to 1.25×1020 cm−3 when the Al mole fraction was 50%, and 8.5×1019 cm−3 electrons were measured even when the Al mole fraction was 80%. Other material properties were determined by optical absorption, photoluminescence, cathodoluminescence, x-ray diffraction, and atomic force microscopy measurements and high optical and morphological qualities were shown.Keywords
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