Atom Location by Axial-Electron-Channeling Analysis

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Abstract
The channeling of electrons along or between atomic rows in a crystal is used as the basis of a powerful lattice-location technique capable of analyzing small quantities of crystal impurities with high spatial resolution. We demonstrate the technique by locating Sb dopant in Si and compare the results with ion-channeling and planar-electron-channeling analysis. Delocalization corrections are required with the electron-channeling analyses.