Photoluminescence and optical absorption edge for MOVPE‐grown InN
- 6 November 2003
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 240 (2) , 421-424
- https://doi.org/10.1002/pssb.200303459
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Improved Electrical Properties for Metalorganic Vapour Phase Epitaxial InN FilmsPhysica Status Solidi (a), 2002
- Growth Temperature Dependence of Indium Nitride Crystalline Quality Grown by RF-MBEPhysica Status Solidi (b), 2002
- Effects of the narrow band gap on the properties of InNPhysical Review B, 2002
- Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1)Physica Status Solidi (b), 2002
- Effective electron mass and phonon modes inn-type hexagonal InNPhysical Review B, 2002
- Strong band edge luminescence from InN films grown on Si substrates by electron cyclotron resonance-assisted molecular beam epitaxyApplied Physics Letters, 2002
- Physical properties of InN with the band gap energy of 1.1 eVJournal of Crystal Growth, 2001
- Transient electron transport in wurtzite GaN, InN, and AlNJournal of Applied Physics, 1999