Temperature dependence of turn-on process in 4H-SiCthyristors
- 8 May 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (10) , 914-915
- https://doi.org/10.1049/el:19970563
Abstract
The turn-on process in 4H-SiC thyristors with a forward blocking voltage Ub ≃ 400 V has been investigated in the temperature range 160–500 K. The time constant of the current rise τr decreases monotonically with temperature, increasing from τr = 63 ns at T = 160 K to τr = 1.9 ns at T = 495 K.Keywords
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