GaAs growth using tertiarybutylarsine and trimethylgallium
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1-4) , 15-19
- https://doi.org/10.1016/0022-0248(88)90499-x
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Reaction mechanisms in the organometallic vapor phase epitaxial growth of GaAsApplied Physics Letters, 1988
- Use of tertiarybutylarsine for GaAs growthApplied Physics Letters, 1987
- MOVPE growth of GaInAsSbJournal of Crystal Growth, 1986
- Decomposition kinetics of OMVPE precursorsJournal of Crystal Growth, 1986
- Residual donors and acceptors in high-purity GaAs and InP grown by hydride VPEJournal of Electronic Materials, 1983