Carrier density variation in films of Nd 0.5 Sr 0.5 MnO 3
- 1 January 1998
- journal article
- Published by IOP Publishing in Europhysics Letters
- Vol. 41 (1) , 49-54
- https://doi.org/10.1209/epl/i1998-00114-3
Abstract
The carrier density in thin films of Nd0.5Sr0.5MnO3, as derived from Hall measurements, shows a distinct change at the paramagnetic (PM)-ferromagnetic (FM) transition around TC = 225 K. In the PM-semiconducting regime the density is n = 0.30 holes per unit cell and increases in the FM-semimetallic regime to n = 0.49. The magnetoresistance effect in the semimetallic phase is due to a field-induced increase of the carrier mobility, while the carrier density is unaffected. In the low-field limit an extraordinary enhancement of the ρxy(B) slope due to the anomalous Hall effect is observed. The spontaneous Hall resistivity ρxy, reflecting the strength of the asymmetric scattering between carriers and localized magnetic moments, is linked to the zero-field resistivity ρxx via ρxy ∝ ρxx1.74.Keywords
This publication has 16 references indexed in Scilit:
- Magnetic Ordering and Relation to the Metal-Insulator Transition in and with ∼Physical Review Letters, 1997
- Anomalous Hall effect in thin films ofPhysical Review B, 1997
- Large low-field magnetoresistance in La0.7Ca0.3MnO3 induced by artificial grain boundariesNature, 1997
- Magnetotransport in epitaxial thin films of the magnetic perovskitePhysical Review B, 1997
- Magnetoconductivity and Hall effects in La0.67Ca0.33MnO3Applied Physics Letters, 1996
- Surface states at the -point on Cu(100)Solid State Communications, 1996
- Very large magnetoresistance in perovskite-like La-Ca-Mn-O thin filmsApplied Physics Letters, 1994
- Giant negative magnetoresistance in perovskitelike ferromagnetic filmsPhysical Review Letters, 1993
- Magnetoresistance measurements on the magnetic semiconductor Nd0.5Pb0.5MnO3Physica B: Condensed Matter, 1989
- Side-Jump Mechanism for the Hall Effect of FerromagnetsPhysical Review B, 1970