High-Quality 150 mm InP-to-Silicon Epitaxial Transfer for Silicon Photonic Integrated Circuits
- 1 January 2009
- journal article
- Published by The Electrochemical Society in Electrochemical and Solid-State Letters
- Vol. 12 (4) , H101-H104
- https://doi.org/10.1149/1.3065994
Abstract
We demonstrate the transfer of the largest ( in diameter) available InP-based epitaxial structure to the silicon-on-insulator substrate through a direct wafer-bonding process. Over 95% bonding yield and a void-free bonding interface was obtained. A multiple quantum-well diode laser structure is well-preserved after bonding, as indicated by the high-resolution X-ray diffraction measurement and photoluminescence (PL) map. A bowing of is measured, resulting in a low bonding-induced strain of . PL measurement shows a standard deviation of 1.09% across the entire bonded area with less than wavelength shift from the as-grown wafer.Keywords
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