Incorporation mechanism of N, Al, and B impurities in chemical vapor deposition of SiC
- 16 October 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (16) , 2385-2387
- https://doi.org/10.1063/1.114555
Abstract
In situ doping characteristics of N, Al, and B in step‐controlled epitaxy of SiC have been investigated. Clear C/Si ratio dependence was observed in the growth on (0001)Si faces. Doping efficiency of N decreased and those of Al and B increased under the C‐rich condition, which agrees with a model proposed as ‘‘site‐competition epitaxy.’’ However, doping efficiencies were almost independent of the C/Si ratio on (0001̄)C faces. Based on the results, the incorporation mechanism is discussed.Keywords
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