Planar substrate-emitting-microcavity light-emitting diodes with 20% external QE
- 4 April 1997
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 3002, 74-84
- https://doi.org/10.1117/12.271047
Abstract
The external QE of microcavity light emitting diodes strongly depends on the device size and operational current density. Our experiments reveal that spectral broadening of the optical spectrum emitted by the three InGaAs QWs as well as photon originally emitted into the guided mode of the cavity can explain these differences. An optimized microcavity layer design yields external QEs of 20 percent for substrate emitting light emitting diodes with diameters of 1.5 mm.Keywords
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