Dielectric Function and Interband Transitions in Hg1-xZnxTe Solid Solutions

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Abstract
The dielectric function ϵr + iϵi in Hg1-xZnx Te is found, for the first time, at 293 K. It is deduced from spectroscopic ellipsometry measurements for the entire composition range and for photon energies ranging from 0.75 eV to 5.7 eV. A detailed analysis of the chemical treatments leading to the best surfaces which correspond to the highest values of ϵi at the E2 peak is presented. The oxydation of the surface after the last stripping is also studied. The pseudodielectric function is analysed for the critical point model. The variation, with x of the parameters describing the main critical transitions E0,E0 + Δ0, E1,E1 + Δ1 and E2 are obtained. The results are discussed in relation to the band structure and to the properties of these compounds

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