Electroreflectance of heavily doped n-type and p-type Ge near the direct energy gap
- 15 June 1971
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 9 (12) , 839-843
- https://doi.org/10.1016/0038-1098(71)90495-9
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Band-Population Effects in the Electroreflectance Spectrum of InSbPhysical Review B, 1969
- Combined Investigation of Nonuniform-Field Electroreflectance and Surface Galvanomagnetic Properties in GermaniumPhysical Review B, 1969
- Influence of spatially dependent perturbations on modulated reflectance and absorption of solidsSolid State Communications, 1969
- Electroreflectance at a Semiconductor-Electrolyte InterfacePhysical Review B, 1967
- Electric Field Effects on the Dielectric Constant of SolidsPhysical Review B, 1967
- Electroreflectance measurements with the electrolyte method in infraredPhysics Letters, 1966
- Electric-Field Effects on Optical Absorption near Thresholds in SolidsPhysical Review B, 1966
- Band-Structure Analysis from Electro-Reflectance StudiesPhysical Review B, 1966
- Electroreflectance and Spin-Orbit Splitting in III-V SemiconductorsPhysical Review Letters, 1966
- Self-Consistent Field Approach to the Many-Electron ProblemPhysical Review B, 1959