The influence of uniaxial stress on the infrared free carrier faraday effect in n-type silicon and germanium
- 1 February 1971
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 4 (2) , 201-222
- https://doi.org/10.1088/0022-3719/4/2/010
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- High-Stress Optical Birefringence in Pure and Degenerate-Type GermaniumPhysical Review B, 1966
- Influence of Uniaxial Stress on the Indirect Absorption Edge in Silicon and GermaniumPhysical Review B, 1966
- Cyclotron Resonance in Uniaxially Stressed Silicon. II. Nature of the Covalent BondPhysical Review B, 1965
- Magneto‐optical effects in semiconductorsPhysica Status Solidi (b), 1962
- Piezoresistance of-Type GermaniumPhysical Review B, 1959
- Fine Structure in the Absorption-Edge Spectrum of SiPhysical Review B, 1958
- Cyclotron Resonance of Electrons and Holes in Silicon and Germanium CrystalsPhysical Review B, 1955
- Theory of the Galvanomagnetic Effects in GermaniumPhysical Review B, 1954
- Measurement of Elastic Constants at Low Temperatures by Means of Ultrasonic Waves–Data for Silicon and Germanium Single Crystals, and for Fused SilicaJournal of Applied Physics, 1953
- Faraday effect and birefringence—IProceedings of the Indian Academy of Sciences - Section A, 1951