Calculated electron and hold spatial ionization profiles in bulk GaAs and superlattice avalanche photodiodes

This publication has 29 references indexed in Scilit:

• Physics of the enhancement of impact ionization in multiquantum well structures
  Applied Physics Letters, 1987
• The p-n heterojunction quantum well APD: A new high-gain low-noise high speed photodetector suitable for lightwave communications and digital applications
  IEEE Transactions on Electron Devices, 1987
• The p-n junction quantum well APD: A new solid-state photodetector for lightwave communications systems and on-chip detector applications
  IEEE Transactions on Electron Devices, 1987
• Theory of the doped quantum well superlattice APD: A new solid-state photomultiplier
  IEEE Journal of Quantum Electronics, 1986
• Electron and hole impact ionization rates in InP/Ga0.47In0.53As superlattice
  IEEE Journal of Quantum Electronics, 1986
• Electron and hole impact ionization coefficients in GaAs-AlxGa1−xAs superlattices
  Applied Physics Letters, 1985
• Theory of electron impact ionization including a potential step: Application to GaAs-AlGaAs
  IEEE Electron Device Letters, 1985
• Monte Carlo investigation of transient hole transport in GaAs
  Journal of Applied Physics, 1984
• Single-carrier-type dominated impact ionisation in multilayer structures
  Electronics Letters, 1982
• Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio
  Applied Physics Letters, 1982