Design of double-pass electroabsorption modulators with low-voltage, high-speed properties for 40 Gb/s modulation
- 1 January 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 15 (12) , 2287-2293
- https://doi.org/10.1109/50.643558
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Design of double-pass electroabsorption modulators with low-voltage, high-speed properties for 40 Gb/s modulationJournal of Lightwave Technology, 1997
- Multiquantum well electroabsorption modulators for80 Gbit/s OTDMsystemsElectronics Letters, 1995
- High-speed MQW electroabsorption optical modulators integrated with low-loss waveguidesIEEE Photonics Technology Letters, 1995
- Experimental optimisation of MQW electroabsorptionmodulatorswith up to 40 GHz bandwidthsElectronics Letters, 1994
- 20 Gbit/s operation of a high-efficiency InGaAsP/InGaAsP MQW electroabsorption modulator with 1.2-V drive voltageIEEE Photonics Technology Letters, 1993
- Chirping characteristic and frequency response of MQW optical intensity modulatorJournal of Lightwave Technology, 1992
- High-speed InGaAlAs/InAlAs multiple quantum well optical modulators with bandwidths in excess of 20 GHz at 1.55 mu mIEEE Photonics Technology Letters, 1989
- Frequency chirping in external modulatorsJournal of Lightwave Technology, 1988
- High-speed electroabsorption modulator with strip-loaded GaInAsP planar waveguideJournal of Lightwave Technology, 1986
- Franz-Keldysh Effect of the Refractive Index in SemiconductorsPhysical Review B, 1965