Scanning ion beam techniques for the examination of microelectronic devices

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Abstract
A scanning ion microscope has been applied to the examination of microcircuits. Highly localized sputtering with the ion beam can be used for cutting microsections, positioned with submicrometer accuracy, across selected features of semiconductor devices and integrated circuits. These sections can subsequently be examined with the ion beam in the same instrument. The secondary electron signal resulting from ion impact can depend on the voltage distribution over the specimen. Combination of voltage contrast imaging with sectioning gives voltage information from buried features of circuits.
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