Rapid-thermal-oxidized porous Si−The superior photoluminescent Si
- 24 August 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (8) , 943-945
- https://doi.org/10.1063/1.107736
Abstract
To improve the stability of porous Si (PS) prepared by electrochemical etching, we make use of rapid-thermal oxidation (RTO). During RTO processing, the hydride coverage of the internal surfaces of the pores is replaced by a high-quality oxide while retaining nm-sized Si grains. With increasing process temperature Tox the luminescence is first quenched. It is recovered with comparable intensity for Tox≥700 °C.Keywords
This publication has 11 references indexed in Scilit:
- Control of porous Si photoluminescence through dry oxidationApplied Physics Letters, 1992
- Luminescence degradation in porous siliconApplied Physics Letters, 1992
- The origin of visible luminescencefrom “porous silicon”: A new interpretationSolid State Communications, 1992
- Thermal treatment studies of the photoluminescence intensity of porous siliconApplied Physics Letters, 1991
- Electroluminescence in the visible range during anodic oxidation of porous silicon filmsApplied Physics Letters, 1991
- Atmospheric impregnation of porous silicon at room temperatureJournal of Applied Physics, 1991
- Porous silicon formation: A quantum wire effectApplied Physics Letters, 1991
- Composition and Morphology of Luminescent Porous SiMRS Proceedings, 1991
- Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfacesPhysical Review B, 1988
- Formation Mechanism of Porous Silicon Layer by Anodization in HF SolutionJournal of the Electrochemical Society, 1980