A WSi/TiN/Au Gate Self-Aligned GaAs MESFET with Selectively Grown n+-Layer using MOCVD
- 1 May 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (5A) , L342
- https://doi.org/10.1143/jjap.23.l342
Abstract
A WSi/TiN/Au gate self-aligned GaAs MESFET was formed using MOCVD. The WSi/TiN/Au gate acts as a selective growth mask for the n+-layer. This new process is demonstrated to be effective for reducing the gate resistance and source resistance of FETs simultaneously. The gate resistance, R g, was 3.4 Ω (L g=1.3 um, W g=30 um) and was reduced one tenth compared to that of the WSi gate. A high-speed MSI and high performance microwave device can be obtained by using the WSi/TiN/Au gate self-aligned GaAs MESFETs.Keywords
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