Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)
Top Cited Papers
- 1 December 2000
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 221 (1-4) , 316-326
- https://doi.org/10.1016/s0022-0248(00)00707-7
Abstract
No abstract availableKeywords
This publication has 32 references indexed in Scilit:
- High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaNApplied Physics Letters, 1999
- Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1998
- The formation of crystalline defects and crystal growth mechanism in InxGa1−xN/GaN heterostructure grown by metalorganic vapor phase epitaxyJournal of Crystal Growth, 1998
- Magnesium induced changes in the selective growth of GaN by metalorganic vapor phase epitaxyApplied Physics Letters, 1998
- Pendeo-Epitaxy - A New Approach for Lateral Growth of Gallium Nitride StructuresMRS Proceedings, 1998
- Epitaxial Lateral Overgrowth of GaN with Chloride-Based Growth Chemistries in Both Hydride and Metalorganic Vapor Phase EpitaxyMRS Proceedings, 1998
- Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using A Two-Step ProcessMRS Proceedings, 1998
- Selective-area regrowth of GaN field emission tipsSolid-State Electronics, 1997
- Organometallic Vapor Phase Lateral Epitaxy of Low Defect Density GaN LayersMRS Proceedings, 1997
- Facets Formation Mechanism of GaN Hexagonal Pyramids on Dot-Patterns via Selective MOVPEMRS Proceedings, 1995