Simple method for examining sulphur passivation of facets in InGaAs–AlGaAs (λ=0.98 μm) laser diodes

29 April 1996

journal article
conference paper
Published by AIP Publishing in Applied Physics Letters

Vol. 68 (18) , 2467-2468
https://doi.org/10.1063/1.115822

Abstract

The effect of (NH₄)₂S_x treatment of the facet of InGaAs/AlGaAs ridge waveguide (RW) laser diodes on the nonradiative current and catastrophic optical damage (COD) level is reported. Using the power–voltage–current (P–V–I) characteristics of the electroluminescence at low injection levels, changes in the density of surface states at the laser facets are described.

Keywords

GALLIUM ARSENIDES
INDIUM ARSENIDES
ALUMINIUM ARSENIDES
SEMICONDUCTOR LASERS
HETEROSTRUCTURES
PASSIVATION
SULFIDATION
IV CHARACTERISTIC
ELECTROLUMINESCENCE
DEFECT STATES
DEGRADATION
SURFACE STATES

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