The importance of structure and bonding in semiconductor surface chemistry: hydrogen on the Si(111)-7 × 7 surface
- 1 March 1991
- journal article
- Published by Elsevier in Surface Science
- Vol. 244 (1-2) , 1-14
- https://doi.org/10.1016/0039-6028(91)90164-n
Abstract
No abstract availableThis publication has 35 references indexed in Scilit:
- Formation of Si(111)-(1×1)ClPhysical Review B, 1990
- Site-selectivity in the reaction of silicon(111)-(7.times.7) with disilaneThe Journal of Physical Chemistry, 1990
- Observation of strain in the Si(111) 7×7 surfacePhysical Review B, 1988
- Model for the energetics of Si and Ge (111) surfacesPhysical Review B, 1987
- Surfaces of siliconReports on Progress in Physics, 1987
- Chemisorption of hydrogen on the Si(100) surface: Monohydride and dihydride phasesPhysical Review B, 1984
- Electronic correlation and the Si(100) surface: Buckling versus nonbucklingJournal of Vacuum Science and Technology, 1982
- Structure of Si(111)-(7×7)HPhysical Review Letters, 1981
- Nature of conduction-band surface resonances for Si(111) surfaces with and without chemisorbed overlayersPhysical Review B, 1978
- Hydrogen chemisorption on Si(111)Physical Review B, 1977