High-transconductance enhancement-mode GaAs MESFET fabrication technology
- 1 November 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 4 (11) , 409-411
- https://doi.org/10.1109/edl.1983.25782
Abstract
An improved enhancement-mode GaAs MESFET was fabricated by a high dose Si ion implantation which was used to reduce the source and drain parasitic resistances, and by a Pt buried gate which was used to control the threshold voltage and reduce the interface states of the Schottky gate. 250 mS/mm transconductance has been obtained for 1-µm gate-length enhancement-mode GaAs MESFET.Keywords
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