Raman study of laser annealed silicon
- 30 September 1979
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 31 (11) , 805-808
- https://doi.org/10.1016/0038-1098(79)90392-2
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Time-resolved reflectivity of ion-implanted silicon during laser annealingApplied Physics Letters, 1978
- Role of stresses in annealing of ion-implantation damage in SiApplied Physics Letters, 1978
- Grain size dependence in a self-implanted silicon layer on laser irradiation energy densityApplied Physics Letters, 1978
- Unidirectional contraction in boron-implanted laser-annealed siliconApplied Physics Letters, 1978
- Structural, Optical, and Electrical Properties of Amorphous Silicon FilmsPhysical Review B, 1970
- Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°KPhysical Review B, 1955